SGT-MOS

低导通电阻，高开关效率，高可靠性，高功率密度

SGT-MOSFET采用国际先进的工艺技术，目前已开发出25V~100V的SGT-MOS平台，正在开发150V SGT-MOS平台。
采用独特的版图和结构设计，提高芯片功率密度以及可靠性，基于卓越的研发及设计能力，低电压SGT产品已成功实现目前国内同级产品中最优水平的综合性能。
SGT-MOS的主要应用为开关电源、DC-DC转换器、马达控制等。

咨询方案

产品参数/ Product parameters

Product	Package	Configuration	Polarity	VDS	ID	VGS	VGS(th)		RDS(on)@ 4.5V		RDS(on)@10V		Qg
				VDS	ID	VGS	Min.	Max.	Typ.	Max.	Typ.	Max.	Typ.
				V	A	V	V	V	mΩ	mΩ	mΩ	mΩ	nC
JMV3708NA	DFN 3.3x3.3	Single	N	25	80	±10	0.4	1.2	1.7	2.2	-	-	28.1
JMV3809N	DFN 3.3x3.3	Single	N	25	22	±10	0.4	1.2	9	11.7	-	-	5.5
JMT3801N	DFN 3.3x3.3	Dual	N	25	24	±10	0.4	1.2	9.8	12	-	-	8.9
JMM4719ND	DFN 5x6	Single	N	30	173	±20	1.1	2.2	1.2	1.55	0.85	1.05	107
JMM4719N	DFN 5x6	Single	N	30	173	±20	1.1	2.2	1.2	1.55	0.85	1.05	107
JMV4720ND	DFN 3.3x3.3	Single	N	30	75	±20	1.1	2.2	2.9	3.7	1.9	2.4	32
JMM4720N	DFN 5x6	Single	N	30	70	±20	1.1	2.2	3.1	4	2.1	2.7	32
JMV4708ND	DFN 3.3x3.3	Single	N	30	75	±20	1.1	2.2	2.9	3.7	1.9	2.4	29.5
JMV4708ND	DFN 3.3x3.3	Single	N	30	75	±20	1.1	2.2	2.9	3.7	1.9	2.4	29.5
JMM4708ND	DFN 5x6	Single	N	30	75	±20	1.1	2.2	3	3.8	2	2.5	29.5
JMM4708N	DFN 5x6	Single	N	30	73	±20	1.1	2.2	3.1	4	2.1	2.7	29.5
JMM4808N	DFN 5x6	Single	N	30	70	±20	1.1	2.2	3.3	4.2	2.3	2.9	29.5
JMV4808N	DFN 3.3x3.3	Single	N	30	66	±20	1.1	2.2	3.6	4.6	2.6	3.3	29.5
JMD4808N	TO-252	Single	N	30	74	±20	1.1	2.2	3.7	4.7	2.7	3.4	29.5
JMP4708N	TO-220	Single	N	30	70	±20	1.1	2.2	3.9	5	2.9	3.7	29.5
JMV4812N	DFN 3.3x3.3	Single	N	30	43	±20	1.1	2.2	6.5	8	4.1	5	17.4
JMM4812N	DFN 5x6	Single	N	30	43	±20	1.1	2.2	6.5	8	4.1	5	17.4
JMD4812N	TO-252	Single	N	30	36	±20	1.1	2.2	7.1	8.9	4.7	6.1	17.4
JMM4716N	DFN 5x6	Single	N	30	21	±20	1.1	2.2	10.6	13.8	6.6	8.6	10.9
JMS4710N	DFN 3x3	Dual	N	30	18	±20	1.1	2.2	13.3	17.2	8.3	10.7	8.8
JMS4710N	DFN 3x3	Dual	N	30	18	±20	1.1	2.2	10.9	14.1	6.9	8.9	10.9
JMM5770N	DFN 5x6	Single	N	40	132	±20	1.1	2.2	1.4	1.8	1.1	1.4	97
JMM5770ND	DFN 5x6	Single	N	40	138	±20	1.1	2.2	1.4	1.8	1.1	1.4	97
JMP5770N	TO-220	Single	N	40	113	±20	1.1	2.2	2	2.6	1.6	2.1	97
JMM5771N	DFN 5x6	Single	N	40	81	±20	1.1	2.2	2.8	3.6	2.1	2.6	46
JMV5772ND	DFN 3.3x3.3	Single	N	40	63	±20	1.1	2.2	3.8	4.9	2.8	3.4	39
JMM5772N	DFN 5x6	Single	N	40	61	±20	1.1	2.2	4	5.2	3	3.6	39
JMV5751N	DFN 3.3x3.3	Single	N	40	39	±20	1.1	2.2	7.5	9.8	5	6	15.3
JMM6715N	DFN 5x6	Single	N	60	79	±20	1.2	2.2	3.4	4.4	2.4	2.9	54
JMM6715ND	DFN 5x6	Single	N	60	77	±20	1.2	2.2	3.6	4.7	2.6	3.1	54
JMM6716N	DFN 5x6	Single	N	60	96	±20	1.2	2.2	2.2	2.8	1.8	2.4	89
JMM6716ND	DFN 5x6	Single	N	60	104	±20	1.2	2.2	2.2	2.8	1.8	2.4	89
JMP6716N	TO-220	Single	N	60	94	±20	1.2	2.2	2.6	3.4	2.1	2.7	89
JMM8701N	DFN 5x6	Single	N	100	94	±20	1.5	2.5	5.3	6.9	4.2	5	-
JMP8701N	TO-220	Single	N	100	89	±20	1.5	2.5	5.8	7.5	4.7	5.6	-
JMG8701N	TO-263	Single	N	100	89	±20	1.5	2.5	5.8	7.5	4.7	5.6	-

应用场景/ Product parameters

企业简介

企业文化

经营理念

荣誉资质

发展历程

储能冷却系统

充电桩冷却系统

SGT-MOS

低导通电阻，高开关效率，高可靠性，高功率密度